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| TK80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK80F08K3 Swiching Regulator Unit: mm 10.0 0.3 9.5 0.2 1.0 0.3 0.4 0.1 10.0 0.3 * * * Low drain-source ON-resistance: RDS (ON) = 3.4 m (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 75 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.6 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 20 80 320 300 250 80 30 175 -55 to 175 Unit V V V A 0.76 0.1 1.4 0.1 2.54 0.25 1 0.1 0.1 23 2.35 0.1 2.34 0.25 3.5 0.2 0.4 0.1 2.76 Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range (Note 4) (Note 4) mJ A mJ C C 6.8 Drain power dissipation (Tc = 25C) W 1. GATE 2.DRAIN 2. DRAIN (HEAT SINK) HEAT SINK 3. SOURSE 3. SOURCE 8.0 1.GATE JEDEC JEITA TOSHIBA 2-10W1A Weight: 1.07 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 0.5 Unit C/W 1 2 Note 1: Please use devices on condition that the channel temperature is below 175C. Note 2: VDD = 25 V, Tch = 25C, L = 58 H, RG = 1 , IAR = 80 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. Note 4: 175C refers to AEC-Q101. Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2010-02-02 3.0 0.2 Absolute Maximum Ratings (Ta = 25C) 1.1 TK80F08K3 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS Test Condition VGS = 20 V, VDS = 0 V VDS = 75 V, VGS = 0 V Min 75 50 2.0 VDS = 10 V, VGS = 0 V, f = 1 MHz Typ. 3.4 8200 770 1140 30 Max 1 10 4.0 4.3 pF Unit A A V V m V (BR) DSS ID = 10 mA, VGS = 0 V V (BR) DSX ID = 10 mA, VGS = -20 V Vth RDS (ON) Ciss Crss Coss tr ID = 40 A VOUT RL = 0.75 VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 40 A 10 V VGS 0V 4.7 ns Turn-on time Switching time Fall time ton 55 tf VDD 30 V Duty 1%, tw = 10 s 33 nC Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge1 Gate-drain ("miller") charge Gate switch charge toff Qg Qgs1 Qgd Qsw 150 175 40 65 80 VDD 60 V, VGS = 10 V, ID = 80 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 80 A, VGS = 0 V IDR = 80 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. -0.9 60 60 Max 80 320 -1.2 Unit A A V ns nC Marking Note 6: A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Part No. (or abbreviation code) Lot No. K80F08K 3 Note 6 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-02-02 TK80F08K3 Moisture-Proof Packing The TK150F04K3L is packed in a moisture-proof laminated aluminum bag. Precautions for Transportation and Storage (1) Avoid excessive vibration during transportation. (2) Do not toss or drop the packed devices to avoid ripping of the bag. (3) After opening the moisture-proof bag, the devices should be assembled within two weeks in an environment of 5C to 30C and RH70% or below. Perform reflow at most twice. (4) The moisture-proof bag may be stored unopened for up to 12 months at 5C to 30C and RH90% or below. (5) If, upon opening the bag, the moisture indicator card shows humidity of 30% or above (the color of the 30% dot has changed from blue to pink) or the expiration date has passed, the devices should be baked as follows: Baking conditions: 125C for 48 hours. Since the tape materials are not heat-proof, devices should be placed on either heat-proof trays or aluminum magazines when baking. The humidity indicator shows an approximate ambient humidity at 25C. If the ambient humidity is below 30%, the color of all the indicator dots is blue. If, upon opening the bag, the color of the 30% dot has changed from blue to pink, the devices should be baked before assembly. 30% 3 2010-02-02 TK80F08K3 ID - VDS 50 10 5 5.2 5.5 6 30 4.8 Common source Tc = 25 Pulse test 4.6 300 10 6 8 ID - VDS 5.5 Common source Tc = 25 Pulse test 5.2 5 (A) (A) Drain Current ID 200 150 40 250 8 Drain Current ID 20 4.4 4.8 100 4.6 50 VGS = 4 V 4.2 4.4 10 4.2 VGS = 4 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 200 Common source VDS = 10 V Pulse test 1 VDS - VGS (V) Common source Tc = 25 Pulse test (A) 160 0.8 ID VDS Drain-source voltage 120 0.6 80 100 40 Tc = -55C 0 25 0.4 ID = 80 A 0.2 40 20 0 0 4 8 12 16 20 0 2 4 6 8 10 Drain Current Gate-source voltage VGS (V) Gate-source voltage VGS (V) RDS (ON) - ID 100 Common source Tc = 25 Pulse test Drain-source ON-resistance RDS (ON) (m) 10 VGS = 10 V 1 1 10 100 1000 Drain current ID (A) 4 2010-02-02 TK80F08K3 RDS (ON) - Tc 10 Common source VGS = 10 V Pulse test 40 ID = 80 A 1000 IDR - VDS (A) Common source Tc = 25 Pulse test 10 5 3 Drain-source ON-resistance RDS (ON) (m) 8 300 IDR 20 100 6 Drain reverse current 30 4 10 1 VGS = 0 3 2 0 -80 -40 0 40 80 120 160 1 0 0.4 0.8 1.2 1.6 2.0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 100000 5 Vth - Tc Vth (V) Common source VDS = 10 V ID = 1 mA Pulse test 4 (pF) Gate threshold voltage 10000 Ciss 3 Capacitance C 2 1000 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.1 1 10 Coss 1 Crss 100 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature TC (C) PD - Tc 400 100 Dynamic input/output characteristics Common source ID = 80 A Tc = 25 Pulse test VDS 30 VDD = 60 V 15 12 20 PD (W) (V) 80 VDS Drain power dissipation Drain-source voltage 200 40 VGS 20 8 100 4 0 0 40 80 120 160 200 0 0 60 120 180 0 240 Case temperature Tc (C) Total gate charge Qg (nC) 5 2010-02-02 Gate-source voltage 60 VGS 300 16 (V) TK80F08K3 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 Single Pulse PDM t T Duty = t/T Rth (ch-c) = 0.5C/W 100 1m 10m 100m 1 10 Pulse width tw (s) Safe operating area 1000 500 ID max (pulsed) * 100 ID max (continuous) EAS - Tch EAS (mJ) Avalanche energy 400 100 s * 1 ms * ID (A) 300 10 DC operation Tc = 25C 200 Drain current 1 100 0 25 0.1 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 0.1 1 10 50 75 100 125 150 175 200 Channel temperature (initial) Tch (C) VDSS max 100 1000 Drain-source voltage VDS (V) 20 V 0V BVDSS IAR VDD VDS Waveform E AS = 1 B VDSS L I2 B 2 - VDD VDSS Test circuit RG = 1 VDD = 25 V, L = 58 H 6 2010-02-02 TK80F08K3 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2010-02-02 |
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